Mems mass-spring-damper systems using an out-of-plane suspension scheme

ABSTRACT

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. provisional patent application No. 61/181,565 filed on May 27, 2009, the subject matter of which is hereby incorporated by reference.

FIELD OF THE INVENTION

The present invention relates to microelectromechanical (MEMS) mass-spring-damper (MSD) systems generally. More specifically, the present invention relates to MEMS MSD systems, including MEMS gyroscopes and accelerometers, that are inertial grade and/or that use an out-of-plane (or vertical) suspension scheme and a method for fabricating such MEMS MSD systems.

BACKGROUND OF THE INVENTION

MEMS sensors, such as MEMS gyroscopes and accelerometers, are known in the art. In the past few decades, such sensors have drawn great interest. MEMS technology is attractive because, among other reasons, it enables efficient packaging, minimizes sensor area, and significantly reduces power consumption. Further, more specifically, MEMS sensors can be easily integrated with driving and sensing electronics (CMOS-compatible), such that everything can be packaged on the same chip.

Prior art MEMS sensors typically operate in the rate grade. In other words, generally speaking, such MEMS sensors have a rate resolution greater than 0.1°/hr^(1/2), and require 100 μg for the resolution of detection. Rate grade sensors are useful in certain applications, such as in airbag deployment systems, vehicle stabilization systems, and navigation systems in the automotive industry. But in applications where greater sensor sensitivity is required, rate grade sensors may not be suitable. For example, in applications in the space industry (such as Picosatellites and planetary landers), inertial grade sensors should be used. Inertial grade sensors generally have a rate resolution less than 0.001°/hr^(1/2), and may require fewer than 4 μg for the resolution of detection.

Prior art MEMS sensors may typically operate in the rate grade due to the configuration of suspensions in the sensor. Typically, such MEMS sensor use in-plane (or horizontal) suspensions (which may be attributable, at least in part, to the fact that such configuration makes it easier and more cost-effective to fabricate such MEMS sensors). The use of in-plane suspensions, however, makes it difficult to obtain inertial grade operation. This may be due to a number of reasons. For example, with such configuration, the suspensions and the proof mass are geometrically coupled to one another. In other words, the dimensions of the suspensions cannot be modified without affecting the geometry of the proof mass. Such configuration also limits the proof mass area fill factor of the sensor (or, in other words, the ratio between the area occupied by the proof mass and the total area of the sensor). This may in turn limit the potential size of the proof mass. Reducing the size of the proof mass may result in, among other things, a degraded Brownian noise floor, an increase in the minimum detectable angular rate, and a worsening of output signal sensitivity to input angular rate, as well as a decease in signal-to-noise ratio (SNR). Further, in such arrangement, out-of-plane deflection may be suppressed, which may, in certain instances, detrimentally affect performance.

The use of out-of-plane suspensions in MEMS sensors, however, significantly improves sensor performance, enabling MEMS sensors to achieve inertial grade operation. Such configuration may do so for a number of reasons. For example, the configuration decouples the suspensions from the proof mass, allowing the dimensions of the suspensions to be optimized without affecting the space available for the proof mass, and, further, significantly improves the proof mass area fill factor of the sensor, as well as the volume fill factor. Such configuration permits a larger proof mass and reduces the resonance frequency and Brownian noise floor, as well as improves the mechanical quality factor, the output signal sensitivity to input angular rate, and SNR.

For the aforementioned reasons and others, there is a need in the art for MEMS sensors (including MEMS gyroscopes and accelerometers) that are inertial grade and/or that use out-of-plane (or vertical) suspensions, as well a method for fabricating such MEMS sensors.

SUMMARY OF THE INVENTION

Novel MEMS MSD systems, which use out-of-plane suspensions, are presented. In some embodiments, such MEMS MSD systems may be inertial grade.

An embodiment of a MEMS gyroscope of the present invention is also presented, and may be comprised of a shared proof mass, one or more anchors, one or more movable combs, and a plurality of suspensions, wherein said suspensions are out-of-plane with said shared proof mass. In some embodiments, such MEMS gyroscope may be inertial grade.

An embodiment of a MEMS accelerometer of the present invention is also presented, and may be comprised of a proof mass, one or more anchors, and a plurality of suspensions, wherein said suspensions are out-of-plane with said proof mass. In some embodiments, such MEMS accelerometer may be inertial grade.

A manufacturing process for fabricating out-of-plane suspensions in MEMS MSD systems is also presented. In an embodiment of such fabrication process, the first two sides of an out-of-plane suspension may be realized by etching from a top surface of a substrate, and the other two sides of said out-of-plane suspension may be realized by etching from a bottom surface of said substrate. Embodiments of fabrication processes for embodiments of a MEMS gyroscope and a MEMS accelerometer of the present invention are also presented, as applications of the aforementioned manufacturing process for fabricating out-of-plane suspensions.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 a is an angled, top view of an embodiment of a MEMS gyroscope of the present invention.

FIG. 1 b is an angled, top view of another embodiment of a MEMS gyroscope of the present invention.

FIGS. 1 c and 1 d illustrate how driving and/or sensing electronics may be connected to a MEMS gyroscope of the present invention.

FIG. 2 a is an angled, top view of an embodiment of a MEMS accelerometer of the present invention.

FIG. 2 b is a front view of an embodiment of a MEMS accelerometer of the present invention.

FIG. 2 c is a front view of another embodiment of a MEMS accelerometer of the present invention.

FIG. 2 d illustrates how driving and/or sensing electronics may be connected to a MEMS accelerometer of the present invention.

FIG. 3 a is an example of a potential quad-mass sensing scheme using prior art dual-mass gyroscopes.

FIG. 3 b illustrates how prior art dual-mass gyroscopes cannot be “stacked” next to one another in a quad-mass sensing scheme.

FIGS. 3 c and 3 d are two embodiments of a quad-mass sensing scheme of the present invention, in which a quad-mass gyroscope is linearly driven and linearly sensed.

FIGS. 3 e and 3 f are two embodiments of a quad-mass sensing scheme of the present invention, in which a quad-mass gyroscope is linearly driven but non-linearly sensed.

FIG. 3 g illustrates the sensing directionality for the quad-mass sensing schemes in FIGS. 3 c through 3 f.

FIGS. 4 a through 4 b illustrate steps that may be used to realize vertical suspensions in a MEMS MSD system.

FIGS. 5 a through 5 l illustrate cross-sections of various steps in an embodiment of the manufacturing process for an embodiment of a MEMS gyroscope of the present invention.

FIGS. 6 a through 6 l illustrate cross-sections of various steps in an embodiment of the manufacturing process for an embodiment of a MEMS accelerometer of the present invention.

FIGS. 7 a and 7 b are scanning electronic microscope (SEM) images of an embodiment of a MEMS gyroscope of the present invention. FIG. 7 c is a SEM image of an embodiment of a MEMS gyroscope of the present invention that illustrates the openings that may be used to short circuit certain components in said gyroscope.

FIG. 8 is a SEM image of an embodiment of a MEMS accelerometer of the present invention.

DETAILED DESCRIPTION Gyroscope

FIG. 1 a illustrates an embodiment of a MEMS gyroscope of the present invention. The gyroscope 10 may comprise, among other things, a shared proof mass 20; first, second, third, and fourth anchors 30 a, 30 b, 30 c, 30 d; first and second drive combs 40 a, 40 b; first and second sense combs 50 a, 50 b; and a plurality of suspensions 60.

The shared proof mass 20 may be located at the center of said gyroscope 10, and may have first, second, third, and fourth edges and first, second, third, and fourth corners. In some embodiments, the shared proof mass 20 may be square-shaped. The shared proof mass 20 (as well as the other components of the gyroscope 10) may be made of any dielectric substance. In some embodiments, the shared proof mass 20 may be comprised of crystalline Silicon (Si). Also in some embodiments, there may be a layer of oxide dividing the shared proof mass 20 into an upper and a lower mass. During operation of the gyroscope 10, the shared proof mass 20 may vibrate. Where there is a rotation of the gyroscope 10, the shared proof mass 20 may experience a “secondary vibration,” or vibrate in an orthogonal direction. Such secondary vibrations may be used to determine the angular velocity (and thus angular displacement) of the object or device to which the gyroscope 10 is affixed or connected.

Each anchor 30 a-d of the gyroscope 10 may lie parallel with an edge of said shared proof mass 20, such that, for example, the first anchor 30 a lies parallel with the first edge of the shared proof mass 20. Each anchor 30 a-d may have a first corner and a second corner. In some embodiments, the anchors 30 a-d may have the same range of length and thickness as the shared proof mass 20, and further may each have a width ranging from 200 μm to 400 μm. Varying the dimensions of said anchors should generally not affect the performance of the gyroscope 10. In some embodiments, the anchors 30 a-d may be made of crystalline Si. The anchors 30 a-d may be used to fix, or “anchor,” the gyroscope 10 and/or the components thereof to the substrate on which the gyroscope 10 rests.

Suspensions 60 may extend out-of-plane, or vertically or upward, from the first and second corners of the anchors 30 a-b. Suspensions 60 may similarly extend out-of-plane from the first, second, third, and fourth corners of the shared proof mass 20. Thus, in some embodiments, said shared proof mass 20 may rest below the suspensions 60, and, in certain of such embodiments, in plane with the anchors 30 a-b. Also in some embodiments, said suspensions 60 may have a cross-section ranging from 5×5 μm² to 100×100 μm², and, in certain of such embodiments, have a cross-section of 10×70 μm². Also in some embodiments, said suspensions 60 may have a length ranging from 150 μm to 600 μm, and, in certain of such embodiments, have a length of 250 μm. The cross-sectional dimensions and the length of the suspensions 60 may affect the stiffness constant of said suspensions 60, which may affect such sensor's resonant frequency, support losses, quality factor, and/or noise level, as well as rotation rate. Generally speaking, increasing the size of a suspension's 60 cross-section increases its stiffness, and increasing a suspension's 60 length decreases its stiffness. The cross-section and length of the suspensions 60 should be designed so as to minimize suspension 60 stiffness. In some embodiments, the suspensions 60 may be made of crystalline Si.

Said suspensions 60 may provide support for the movable combs. In some embodiments, said movable combs may be comprised of first and second drive combs 40 a-b and first and second sense combs 50 a-b. The first and second drive combs 40 a-b may have first, second, third, and fourth corners. Similarly, the first and second sense combs 50 a-b may have first, second, third, and fourth corners. Said suspensions 60, extending from said anchors 30 a-d and said shared proof mass 20, may connect with said corners of said combs 40 a-b, 50 a-b, with said combs 40 a-b, 50 a-b resting on top of said suspensions 60.

In some embodiments, the drive combs 40 a-b and sense combs 50 a-b may have the same dimensions as one another, and the gyroscope 10 may be a three-fold-symmetric gyroscope (3FSG). In other words, the gyroscope 10 may have three geometrical symmetries: about the center line, parallel to the X-axis; about the center line, parallel to the Y-axis; and about the diagonal of the gyroscope 10. Such symmetry aids in matching the driving and sense modes of said gyroscope 10. The drive combs 40 a-b may be used for the actuation of the spring-mass-damper system (for example, in the X-direction). When a rotational rate is applied (for example, in the Z-direction), the sense combs 50 a-b may be used to sense the Coriolis force in the cross-product direction (for example, in the Y-direction). In some embodiments, the combs 40 a-b, 50 a-b may be made of crystalline Si.

The total proof mass of the gyroscope 10 may be the shared proof mass 20 plus two combs 40 a-b, 50 a-b. In some embodiments, the total drive proof mass may be the shared proof mass 20 plus the first and second drive combs 40 a-b, and, similarly, the total sense proof mass may be the shared proof mass 20 plus the first and second sense combs 50 a-b. The total proof mass may have a length and width ranging from 100 μm to 3 mm and a thickness ranging from 10 μm to 300 μm. In certain embodiments, the total proof mass may be 1200 μm×1200 μm×200 μm, and have a proof mass area fill factor of 73.4%. Also in some embodiments, the total proof mass may have a weight ranging from 30 μg to 3 mg. In certain embodiments, the two combs 40 a-b, 50 a-b may comprise less than 10% of the area and weight of the total proof mass.

FIG. 1 b illustrates another embodiment of a MEMS gyroscope 10′ of the present invention, specifically a gimbaled MEMS gyroscope 10′. In this embodiment, four anchors 30 a′-30 d′ are used to fix, or “anchor,” said gyroscope 10′ to the substrate on which the gyroscope 10′ rests. Outer suspensions 60 a′ may then extend out-of-plane (or upwardly therefrom) to support an outer proof mass (or gimbal) 20 a′. Inner suspensions 60 b′ may then extend out-of-plane from said outer proof mass 20 a′. Resting on top of said inner suspensions 60 b′ may be an inner proof mass 20 b′. As can be seen in FIG. 1 b, in this embodiment, the proof masses 20 a′-b′ may rest on top of, instead of being suspended below (as in FIG. 1 a), their respective suspensions 60 a′-b′. In this embodiment, the outer proof mass 20 a′ may vibrate in the drive mode (X-axis), while the inner proof mass 20 b′ may vibrate in the sense mode (Y-axis). Such configuration may decouple sensed motion in two orthogonal directions.

Accelerometer

FIG. 2 a illustrates an embodiment of a MEMS accelerometer of the present invention. The accelerometer 110 may comprise, among other things, a proof mass 120; first, second, third, and fourth anchors 130 a, 130 b, 130 c, 130 d; and a plurality of suspensions 160.

The proof mass 120 may be located at the center of said accelerometer 110, and may have first, second, third, and fourth corners. In some embodiments, there may be a layer of oxide dividing the proof mass 120 into an upper mass 122 a and a lower mass 122 b. Also in some embodiments, the upper mass 122 a and lower mass 122 b may have a length and width ranging from 100 μm to 3 mm, as well as a thickness ranging from 10 μm to 300 μm. Also in some embodiments, the proof mass 120 may have a weight ranging from 30 μg to 3 mg. As with the gyroscope, increasing the weight of the proof mass 120 may improve the sensitivity of the accelerometer 110, while increasing the dimensions of the proof mass 120 may detrimentally affect performance. The proof mass 120 (as well as the other components of the accelerometer 110) may be made of any dielectric substance. In some embodiments, the proof mass 120 may be made of crystalline Si. Where the object or device to which the accelerometer 110 is affixed or connected to moves, the proof mass 120 will vibrate or be displaced. Such vibration or displacement may be used to determine the angular acceleration of such object or device.

Each anchor 130 a-d of the accelerometer 110 may lie at or around a corner of the proof mass 120, such that, for example, the first anchor 130 a lies at or around the first corner of the proof mass 120. Each anchor 130 a-d may have a first corner. Varying the dimensions of said anchors 130 a-d should generally not affect the performance of the accelerometer 110. In some embodiments, the anchors 130 a-d may be made of crystalline Si. The anchors 130 a-d may be used to fix, or “anchor,” the accelerometer 110 and/or the components thereof to the substrate on which the accelerometer 110 rests.

Suspensions 160 may extend out-of-plane, or vertically or upward, from the first corners of the anchors 130 a-d, and may connect with the first, second, third, and fourth corners of the proof mass 120. Thus, in some embodiments, the proof mass 120 may rest on top of said suspensions 160. Such configuration is consistent with the function of an accelerometer, which need only sense in a single mode. In some embodiments, said suspensions 160 may have a cross-section ranging from 5×5 μm² to 100×100 μm². Also in some embodiments, said suspensions 160 may have a length ranging from 250 μm to 600 μm. The cross-sectional dimensions and length of the suspensions 160 may affect the stiffness constant of said suspensions 160, as such dimensions and length similarly affect the gyroscope 10 (as described above), and, more specifically, may affect the resolution in acceleration. In some embodiments, the suspensions 160 may be made of crystalline Si.

FIGS. 2 b and 2 c illustrate front views of two embodiments of a MEMS accelerometer of the present invention. FIG. 2 b, like FIG. 2 a, illustrates an embodiment where the proof mass 120 rests on the suspensions 160. FIG. 2 c illustrates another embodiment, where the suspensions 160 are connected directly to the upper mass 122 a, and where the lower mass 122 b is smaller than, and thus “hangs” below, said upper mass 122 a. In some embodiments, said lower mass 122 b may be 100 μm to 200 μm shorter in length than said upper mass 122 a. Such configuration may be achieved during the selective etching in the fabrication process described below. As can be seen by a comparison of FIGS. 2 b and 2 c, the configuration in FIG. 2 c allows for an increased suspension 160 length. FIG. 2 c further demonstrates the geometrical decoupling of the suspensions 160 and the proof mass 120, a benefit of the present invention.

Quad-Mass MEMS Gyroscopes and other Sensors

The use of out-of-plane (or vertical) suspensions provides a further benefit with respect to multi-mass sensors. By way of example, multi-mass gyroscopes may be implemented by situating two prior art dual-mass gyroscopes 210 a, 210 b next to each other, facing in opposite directions, as can be seen in FIG. 3 a. (The anchors are labeled as 212, and the in-plane suspensions are labeled as 214.) There are numerous drawbacks to such arrangement. For example, this arrangement doubles the overall area that the sensors (or gyroscopes) occupy. Further, such prior art dual-mass gyroscopes 210 a-b must be wired to one another to share sensory information. Such drawbacks cannot be alleviated using such prior art dual-mass gyroscopes because, as can be seen from FIG. 3 b, such gyroscopes 210 a-b cannot be “stacked” next to one another due to the presence of the in-plane (or horizontal) suspensions 214, which would interfere with each other.

As can be from FIGS. 3 c through 3 f, by contrast, the use of out-of-plane suspensions permits four sensors (including, without limitation, MEMS gyroscopes and accelerometers) of the present invention to be placed one next to the other. By way of example, in a quad-mass gyroscope of the present invention, four gyroscopes 220 a, 220 b, 220 c, 220 d of the present invention may be placed one next to the other to create a dual-differential sensing scheme. The gyroscopes 220 a-d may share sense combs and/or drive combs (and thus electrical sense and/or drive signal circuitry). With respect to FIGS. 3 c and 3 d, such quad-mass gyroscopes 220 are linearly driven and linearly sensed. With respect to FIGS. 3 e and 3 f, such quad-mass gyroscopes 220 are linearly driven but non-linearly sensed. Locations of where first (driving), third (sensing), and, where applicable, fourth (sensing) signals may be found are labeled on 250 a, 250 c, and 250 d. (A second (driving) signal is not shown, but may be connected to the gyroscopes 220 a-d to provide a DC polarization voltage, as well other driving signals.) As can be seen by comparing FIGS. 3 c and 3 d to FIGS. 3 e and 3 f, the embodiments in FIGS. 3 e and 3 f use parallel plate capacitors with respect to the sense combs, whereas the embodiments in FIGS. 3 c and 3 d use comb-drive capacitors. Parallel plate capacitors may provide more sensing capacitance and capacitance changes due to displacement.

As should be obvious to one skilled in the art, the out-of-plane (or vertical) suspension scheme presented herein is not limited to use in respect of gyroscopes, accelerometers, and quad-mass gyroscopes, but rather can be used in other MEMS sensory systems. Specifically, such out-of-plane suspension scheme can be used in any MEMS MSD system (including, by way of example and without limitation, radio frequency MEMS resonators and MEMS-based mechanical filters), as MSD systems use a mass attached to a suspension to detect and/or determine sensory information.

Method of Fabrication

The MEMS MSD systems of the present invention, including MEMS gyroscopes and accelerometers, can be fabricated using various types of micromachining. By way of example, various type of bulk micromachining may be used, including, without limitation, deep reactive ion etching (DRIE), LIGA, and electroforming. Bulk micromachining provides a number of advantages over surface micromachining. For example, bulk micromachining allows for a sensor with a larger proof mass and improved capacitance. Also by way of example, with surface micromachining, the lateral (in-wafer-plane) dimensions are generally tighter than those allowed by bulk micromachining techniques, in part due to the inherent mechanical stresses and stress gradient of surface micromachined structural layers.

As previously described, the MEMS MSD systems of the present invention use out-of-plane suspensions. The following steps represent an embodiment of the manufacturing process that may be used to fabricate such out-of-plane suspensions in such MEMS MSD systems. First, a dielectric substrate 500 may be etched from the top surface 502 to form the first two sides of an out-of-plane suspension 506 a-b, as can be seen in FIG. 4 a. In some embodiments, said first two sides of said out-of-plane suspension 506 a-b may be patterned using DRIE. Second, said dielectric substrate 500 may be etched from the bottom surface 504 to form the other two sides of said out-of-plane suspension 506 c-d, as can be seen in FIG. 4 b. In some embodiments, said other two sides of said out-of-plane suspension 506 c-d may also be patterned using DRIE. The cross-section and length of said suspension may be dictated by the desired performance characteristics of the applicable MEMS MSD system.

Methods of fabricating an embodiment of a MEMS gyroscope of the present invention and an embodiment of a MEMS accelerometer of the present invention will now be presented, as applications of the fabrication process described in the preceding paragraph. Although the following methods are presented in a specific sequence, other sequences may be used and certain steps omitted or added. It should be noted that the shapes of any etchings, and the dimensions of such shapes, as well as the shapes and depths of any deposited metal, will be dictated by the desired dimensions and shapes of the sensor and the components thereof, as will be obvious to one having ordinary skill in the art.

MEMS Gyroscope

As shown in FIG. 5 a, a substrate 510, such as silicon on insulator (SOI) substrate, having a top surface 512 and a bottom surface 514 may be provided. In some embodiments, said substrate 510 may, starting from the top surface 512, have the following layers: a first layer of oxide 520 having a thickness of 4 μm; a first layer of silicon 522 having a thickness of 100 μm; a second layer of oxide 524 having a thickness of 4 μm; a second layer of silicon 526 having a thickness of 570 μm; and a third layer of oxide 528 having a thickness of 4 μm. Said oxide layers 520, 524, 528 may each act as a sacrificial layer during etching.

As shown in FIGS. 5 b and 5 c, the top surface 512 of the substrate 510 may be selectively etched to define the shared proof mass, the movable combs, and the out-of-plane suspensions, as well the openings 530 that may be used to short circuit portions of certain gyroscope components that are separated by the second layer of oxide 524. Generally speaking, said openings 530 should be narrow enough to allow for a conformal coating of a conductive metal and to permit a trench that may be etched therethrough to close completely when said metal is deposited. By depositing a conductive material in the trenches that may be etched in said openings 530, said portions of said certain gyroscope components may be “short circuited” and thus electrically connected to one another. Contact pads for the shared proof mass may also be etched in these steps. Signals sensed by the shared proof mass through the out-of-plane suspensions and down to the sensor's anchors may be transmitted to such contact pads. In some embodiments, the etching may be to a depth of 130 μm to 140 μm, thereby etching through said first layer of oxide 520, said first layer of silicon 522, said second layer of oxide 524, and a portion of said second layer of silicon 526.

As shown in FIG. 5 d, the top surface 512 of the substrate 510 may be further etched to remove the remainder of the first oxide layer 520. This will prepare the substrate 510 for the deposition of the conductive metal as described in the next paragraph.

As shown in FIG. 5 e, in this step, a conductive metal may be deposited by various techniques (including, without limitation, sputtering, platting, and pulse laser deposition) on the top surface 512 of the substrate 510. In some embodiments, a conformal coating of Silicon Germanium (SiGe) may be deposited, using low pressure chemical vapor deposition (LPCVD), on said top surface 512 and in the areas etched in the preceding two steps (e.g., the openings 530). Such conductive metal may short-circuit the total proof mass. In this case, short circuiting the total proof mass may be done through the movable combs, which, in this embodiment, are the parts that are connected to the suspensions affixed to the anchors. Such short-circuit may be necessary so that the signal from the movable combs may be passed through the anchors by way of the out-of-plane suspensions.

As shown in FIG. 5 f, a thin layer of oxide may be selectively deposited on the top surface 512 of the substrate 510, over the conductive metal deposited in the previous step. In some embodiments, Silicon Dioxide (SiO₂) may be selectively deposited using LPCVD. This may be used to define, among other things, the fixed electrodes. The fixed electrodes are fixed comb-drive electrodes that may face the movable comb-drive electrodes of the drive and sense modes. Said fixed electrodes represent the other terminal of the linear comb-drive capacitance (whether for the drive and sense modes of the gyroscope or for the sense mode of the accelerometer). They may be used to interface the fabricated gyroscope to the drive and sense circuitry (i.e., the CMOS). In some embodiments, the thickness of the oxide may range sub-μm to 10 μm, depending the permissible parasitic capacitance.

As shown in FIG. 5 g, the areas between said fixed electrodes 550 and the gyroscope may be selectively etched. In some embodiments, said areas may be etched using DRIE through to the second layer of oxide 524.

As shown in FIG. 5 h, the layer of oxide remaining on the top surface 512 of the substrate 510 may then be etched, in some embodiments using DRIE, so as to remove the remainder of such oxide. Such etching may complete the fabrication of the top surface 512 of the substrate 510, realizing the fixed electrodes 550, the shared proof mass 20, and the drive and sense combs 40 a-b, 50 a-b. (As can be seen in this FIG. 5 h, there is a “short circuit” in the middle of the movable combs, connecting the portions of said combs that are below and above the second layer of oxide 524.)

As shown in FIGS. 5 i and 5 j, the bottom surface 514 of the substrate 510 may be selectively etched, in some embodiments using DRIE, to define the outer boundaries 532 of the gyroscope. Such etching may be to a depth of 50 μm.

As shown in FIG. 5 k, the bottom surface 514 of the substrate 510 may be further selectively etched to remove selected portions of the third layer of oxide, in order to prepare the bottom surface 514 of the substrate 510 for further etching.

As shown in FIG. 5 l, the bottom surface 514 of the substrate 510 may be selectively etched to finalize the gyroscope. At the outer boundaries, said bottom surface 514 may be etched up to the second layer of oxide 524. The bottom surface may be etched to a depth of 250 μm to 500 μm to realize the out-of-plane suspensions 60. In some embodiments, DRIE may be used to perform such etching. Such etching may, among other things, reduce parasitic capacitance.

MEMS Accelerometer

As shown in FIG. 6 a, a substrate 610, such as silicon on insulator (SOI) substrate, having a top surface 612 and a bottom surface 614 may be provided. In some embodiments, said substrate 610 may, starting from the top surface 612, have the following layers: a first layer of oxide 620 having a thickness of 4 μm; a first layer of silicon 622 having a thickness of 100 μm; a second layer of oxide 624 having a thickness of 4 μm; a second layer of silicon 626 having a thickness of 570 μm; and a third layer of oxide 628 having a thickness of 4 μm. Said oxide layers 620, 624, 628 may each act as a sacrificial layer during etching.

As shown in FIG. 6 b, the first layer of oxide 620 may be selectively etched to define the openings 630 for the trenches that will be used to “short circuit” the proof mass, as well as to define the out-of-plane suspensions. Further, as shown in FIG. 6 c, the openings 630 and out-of-plane suspensions may be etched through to a depth of 130 μm to 140 μm. In some embodiments, said etching may be performed using DRIE.

As shown in FIG. 6 d, the top surface 612 of the substrate 610 may be further etched to remove the remainder of the first oxide layer 620. In some embodiments, said etching may be performed using DRIE. This will prepare the substrate 610 for the deposition of the conductive metal as described in the next paragraph.

As shown in FIG. 6 e, in this step, a conductive metal may be deposited by various techniques (including, without limitation, sputtering, platting, and pulse laser deposition) on the top surface 612 of the substrate 610. In some embodiments, a conformal coating of Silicon Germanium (SiGe) may be deposited, using low pressure chemical vapor deposition (LPCVD), on said top surface 612 and in the openings 630 and out-of-plane suspensions. As with the gyroscope, the conductive metal deposited in the openings may short-circuit parts of the proof mass (i.e., parts below and above the second oxide layer).

As shown in FIG. 6 f, a thin layer of oxide may be selectively deposited on the top surface 612 of the substrate 610. In some embodiments, Silicon Dioxide (SiO₂) may be selectively deposited using LPCVD. This may be used to define, among other things, the isolated electrodes. The isolated electrodes carry the necessary electrical signals for sensing purposes. In some embodiments, the thickness of the oxide may range from sub-μm to 10 μm, depending on the maximum permissible parasitic capacitance.

As shown in FIG. 6 g, the areas between the isolated electrodes 650 and the accelerometer may be selectively etched. In some embodiments, said areas may be etched using DRIE through to the second layer of oxide 624.

As shown in FIG. 6 h, the layer of oxide remaining on the top surface 612 of the substrate 610 may then be etched, in some embodiments using DRIE, so as to remove the remainder of such oxide. Such etching may complete the fabrication of the top surface 612 of the substrate 610, realizing the isolated electrodes 650 and the proof mass 120.

As shown in FIGS. 6 i and 6 j, the bottom surface 614 of the substrate 610 may be selectively etched, in some embodiments using DRIE, to define the outer boundaries 632 of the accelerometer. Such etching may be to a depth of 50 μm.

As shown in FIG. 6 k, the bottom surface 614 of the substrate 610 may be further selectively etched to remove selected portions of the third layer of oxide 628, in order to prepare the bottom surface 614 of the substrate 610 for further etching.

As shown in FIG. 6 l, the bottom surface 614 of the substrate 610 may be selectively etched to finalize the accelerometer. At the outer boundaries, said bottom surface 614 may be etched up to the second layer of oxide 624. Around the out-of-plane suspensions, the bottom surface 614 may be etched to a depth of 250 μm to 550 μm to realize said suspensions 160. In some embodiments, DRIE may be used to perform such etching. Such etching may, among other things, reduce parasitic capacitance.

Test Results MEMS Gyroscope

An embodiment of a MEMS gyroscope of the present invention was tested against a prior art MEMS gyroscope, as such prior art gyroscope is described in the following publication: A. Sharm, F. Zaman, B. Amini, F. Ayazi, “A High-Q In-Plane SOI Tuning Fork Gyroscope,” IEEE, 2004, pp. 467-470. Such gyroscopes had the same sensor area, 2 mm², and wafer thickness, 675 μm. The key difference between such gyroscopes was that the prior art MEMS gyroscope used in-plane suspensions, whereas the MEMS gyroscope of the present invention used out-of-plane suspensions. With respect to the MEMS gyroscope of the present invention, such tests were performed using COMSOL Multiphysics v3.5. The performance results of the prior art gyroscope were obtained from the aforementioned publication. A comparison of the performance of each gyroscope can be seen in the following Table 1.

TABLE 1 Performance Prior Art Embodiment of the Measure Design Present Invention 1. Dimensions of the 570*570*40 μm³ 1200*1200*200 μm³ Total Proof Mass and PMAFF ~ 17% PMAFF ~ 73.4% Proof Mass Area PMVFF ~ 1% PMVFF ~ 22% Fill Factor (The effective mass is around (PMAFF) and Proof 22 times larger due to area and Mass Volume Fill thickness expansion inherent Factor (PMVFF) with the novel gyroscope architecture.) 2. Total Proof Mass 0.03 mg 0.67 mg (M_(e)) (The resulting mass is in the order of 1 mg) 3. Resonance Frequency 17.4 KHz 3.7 KHz (F_(r)) for the Same (The frequency is still high in Stiffness and this embodiment because of Support Losses the Poly-Silicon material properties.) 4. Quality Factors for 81,000 and 64,000 380,000 and 300,000 Drive and Sense Modes (These will be limited or (Q_(d) and Q_(s)) clipped by the Q values due to finite support losses and thermo-elastic damping.) 5. Theoretical 0.3°/hr 0.014°/hr Mechanical Noise (The noise floor is reduced by Equivalent Angular a factor of 22, and is deeply in Rate (MNEΩ) the inertial grade range.) 6. Drive Mode 1 μm 4.69 μm Amplitude (X_(d)) for the Same Drive Voltage 7. Sense Mode 1 nm 103 nm Amplitude (X_(s)) (The Coriolis displacement sensed at the output is more than two orders of magnitude more.) 8. Drive and Sense 0.16 pF 0.34 pF Capacitances (The capacitance is increased (C_(d) and C_(s)) due to improving the PMAFF, but the active or electrical thickness is the same.) 9. Parasitic or Coupling 100*570 μm² 100*100 μm² Sustaining Area for the (The parasitic capacitance is Same SOI Oxide reduced by a factor of 5.7 as a Thickness result of the suggested support for the fixed combs.) 10. Electrical Output 1.25 mV/°/s 125 mV/°/s Sensitivity (S_(e)) 11. Signal to Noise 4.17 mV/°/hr 9,166 mV/°/hr Ratio (SNR) (The SNR is improved by 2200 times or more than three orders of magnitude.)

As can be seen in Table 1, with the MEMS gyroscope of the present invention, the total proof mass size is increased by more than an order of magnitude (i.e., ten times) in the same overall device area (i.e., 2 mm²). The quality factor, drive amplitude, and resonance frequency are improved by a factor of 4.7. The dominating Brownian noise floor is lowered by a factor of 22, i.e., more than an order of magnitude. Furthermore, the sensed Coriolis displacement, output signal, and sensor sensitivity are improved by a factor of 103. Finally, the SNR is improved by more than three orders of magnitude.

Table 2 shows the resonance frequency and coupling percentage for various embodiments of a MEMS gyroscope of the present invention. Such simulation results were obtained using COMSOL Multiphysics v3.5. As can be seen from this table, the decoupling ratio of such various embodiments of a MEMS gyroscope of the present invention are in the same range as prior art MEMS gyroscopes (i.e., MEMS gyroscopes using in-plane suspensions). Thus, the MEMS gyroscopes of the present invention can provide improved performance (as shown in Table 1) without detrimentally affecting other performance measures.

TABLE 2 Shared 800 μm 1000 μm 1000 μm 1000 μm 1800 μm Proof Mass Side Length Shared 100 μm 100 μm 100 μm 100 μm 100 μm Proof Mass Thickness Width of the 100 μm 100 μm 100 μm 100 μm 100 μm Flying Comb Portion Suspension 10*70 10*70 10*50 10*50 10*70 Cross- μm² μm² μm² μm² μm² Section Dimensions Suspension 300 μm 400 μm 400 μm 300 μm 400 μm Length Resonance 20.1 KHz 7.8 KHz 8.4 KHz 11.9 KHz 4.9 KHz Frequency Coupling 2.3% 2.0% 1.7% 1.6% 1.4% Percentage

MEMS Accelerometer

Embodiments of a MEMS accelerometer of the present invention were tested against a prior art MEMS accelerometer, as such prior art accelerometer is described in the following publication: B. V. Amini and F. Ayazi, “Micro-Gravity Capacitive Silicon-On-Insulator Accelerometers,” Journal of Micromechanics, Vol. 15, No. 11, October 2005, pp. 2113-2120. The key difference between the accelerometers was that the prior art MEMS accelerometer used in-plane suspensions, whereas the MEMS accelerometers of the present invention obviously used out-of-plane suspensions. With respect to the MEMS accelerometers of the present invention, such tests were performed using COMSOL Multiphysics v3.5. The performance of the results of the prior art gyroscope were obtained from the aforementioned publication. A comparison of the performance of each accelerometer can be seen in the following Table 3.

TABLE 3 Embodiment Embodiment Prior of the Present of the Present Performance Art Invention With Invention With Measure Design Reduced Area Same Area Area of the Proof 12 1.65 12 Mass (mm²) Proof Mass (mg) 1.7 0.98 7.1 Resonance Frequency 2000 670 250 (Hz) Brownian Noise Floor 0.7 0.842 0.19 (μg Hz^(−1/2)) Static Sensitivity >0.2 >0.07 >0.98 (pF g⁻¹)

As can be seen from Table 3, the MEMS accelerometer of the present invention can provide the same or similar performance as the prior art design, but with less than 15% of the proof mass area. The resulting resonance frequency is 66% less. Moreover, with the present invention, the Brownian noise floor will remain sub-μg. Furthermore, when the MEMS accelerometer of the present invention is designed to use the same device area as the prior art design, performance is significantly improved. First, the proof mass becomes rather large (approximately 7 mg). Further, the resonance frequency is decreased to 250 Hz, which is less than 13% of the resonance frequency of the prior art design. In addition, the Brownian noise floor is deeply in the inertial grade range. Finally, with the present invention, the SNR is improved by more than an order of magnitude.

Table 4 shows the resonance frequency and coupling percentage for various embodiments of a MEMS accelerometer of the present invention. Such simulation results were obtained using COMSOL Multiphysics v3.5. This table shows the range of resonant frequencies that be achieved using the present invention with a small proof mass.

TABLE 4 Upper Mass 1500* 1500*1 1500* 1500* Dimensions (μm) 1500*100 500*100 1500*100 1500*100 Lower Mass 1500* 1500* 1500* 1440* Dimensions (μm) 1500*100 1500*100 1500*100 1440*100 Suspension Cross-section 10*30 10*30 10*30 10*30 Dimensions (μm) Suspension Length (μm) 250 300 350 450 Resonance Frequency (Hz) 5389 4121 3288 2316 

1-11. (canceled)
 12. A MEMS accelerometer, comprising: a. a proof mass; b. one or more anchors; and c. a plurality of suspensions; d. wherein said plurality of suspensions are out-of-plane with said proof mass.
 13. The MEMS accelerometer of claim 12, wherein said MEMS accelerometer is an inertial grade MEMS accelerometer.
 14. The MEMS accelerometer of claim 12, wherein said proof mass has a length and width ranging from 100 jlm to 3 mm and a thickness ranging from 10 μm to 300 μm.
 15. The MEMS accelerometer of claim 12, wherein said proof mass is comprised of an upper mass and a lower mass.
 16. The MEMS accelerometer of claim 15, wherein said lower mass has a smaller length than said upper mass.
 17. The MEMS accelerometer of claim 16, wherein said lower mass is 100 μm to 200 μm shorter in length than said upper mass.
 18. The MEMS accelerometer of claim 12, wherein said proof mass has a weight ranging from 30 μg to 3 mg.
 19. The MEMS accelerometer of claim 12, wherein said proof mass, said one or more anchors, and said suspensions are comprised of crystalline Silicon.
 20. The MEMS accelerometer of claim 12, wherein said proof mass rests on said suspensions.
 21. The MEMS accelerometer of claim 12, wherein said suspensions have a cross-section ranging from 5×5 μm² to 100×100 μm².
 22. The MEMS accelerometer of claim 12, wherein said suspensions have a length ranging from 250 μm to 600 μm.
 23. The MEMS accelerometer of claim 12, wherein said MEMS accelerometer is bulk micromachined. 24-29. (canceled)
 30. A method for fabricating a vertical suspension in a substrate in a MEMS mass-spring-damper system, said method comprising the steps of: a. realizing a first side and a second side of said vertical suspension by selectively etching through a top surface of said substrate; and b. realizing a third side and a fourth side of said vertical suspension by selectively etching through a bottom surface of said substrate.
 31. The method of claim 30, wherein said etching in steps (a) and (b) is performed using DRIE.
 32. The method of claim 30, wherein said MEMS mass-spring-damper system is an inertial grade MEMS gyroscope.
 33. The method of claim 30, wherein said MEMS mass-spring damper system is an inertial grade MEMS accelerometer. 